IMEC Releases Latest Silicon Wafer Chip Production Technology

[Intelligent LED News] Recently, IMEC (Interuniversity Microelectronics Centre, European Microelectronics Research Center) announced new developments in the R&D project of the GaN Industrial Alliance Program (IIAP), which jointly developed a 200 mm silicon with its partners. A technique for growing GaN/AlGaN on a wafer.

With this new technology, GaN MISHEMTs (metal-insulator semiconductor high-electron mobility transistors) can strictly follow the pollution control requirements of CMOS (Complementary Metal Oxide Semiconductor) in the process line. Production is carried out (no need to add gold as a precious metal), which enables high-quality GaN products to be mass-produced on a 200 mm silicon substrate.

According to IMEC, the technical advantage is mainly to achieve large-scale production and good compatibility. Gallium nitride is a new generation of power devices that have the potential to replace silicon components. IMEC's ​​recent successful use of Applied Materials' MOCVD to successfully produce gallium nitride silicon wafers with no cracks on the surface and a bend of less than 50 microns on 200 mm silicon wafers is an important milestone, as the production of large size wafers is significant for cost reduction.

The second effective factor in reducing costs is how to make power devices compatible with standard CMOS manufacturing processes and tools. IMEC's ​​new technology demonstrates the production of GaN MISHEMTs using standard CMOS processes and verifies that all devices require only minor adjustments in software and hardware. Typically, gold, a precious metal, is used in the circuit connections and gate structures of GaN products, but it makes GaN processing incompatible with CMOS processes. IMEC solves the compatibility problem based on a gold-free circuit connection system and a gold-free metal-insulated semiconductor (MIS) gate structure. This MISHEMT design can also effectively reduce the high leakage problem of traditional HEMTs (high electron mobility transistors).

4G CAT4 CPE

LTE CAT4/CAT6 Definition
The full name of LTE CAT is LTE UE-category, which is broken down to explain :LTE refers to 4G LTE network, UE refers to user equipment, and Category is translated as level. Smooth interpretation is the level of 4G LTE network transmission rate that user devices can support, which can also be said to be a technical standard for 4G network speed. Therefore, LTE CAT4/CAT6 means that the user device LTE network access capability level is 4 or 6.
Since the level is different, then its capabilities are certainly not the same, let's take a look at LTE CAT4/CAT6 affect what performance, respectively, what level. Simply put, LTE CAT affects the upper limit of 4G LTE uplink and downlink network speed, which is generally referred to as the maximum upload and download speed that a user device can achieve.
There are not only 4 and 6 levels in LTE CAT, but the table above is our list of currently known LTE CAT levels and the corresponding maximum transmission speed. Among them, LTE CAT4/CAT6 is also the current network transmission technology level of 4G mobile phones, while the faster CAT7 and CAT8 are still in the laboratory stage and have not been commercially developed.
Phones and chips that support LTE CAT4/CAT6
As far as the current 4G mobile phone market is concerned, most mobile phone products are CAT4 technology, and only a small number of new mobile phones use CAT6 technology, such as Huawei Honor 6, Samsung Galaxy S5 advanced version and LG G3 Cat6, and the concept of LTE CAT6 is proposed by Huawei Honor 6.
For the mobile phone LTE CAT4/CAT6 standard, it is directly linked to the mobile phone chip, or, if you know the processor of the mobile phone, you know which technology the mobile phone uses. For the current 4G mobile phone chips, only Huawei Kirin 920 and Qualcomm Snapdragon 805 processors for LTE CAT6, before this 4G chips are LTE CAT4, the future and Kirin 930, Qualcomm Snapdragon 808/810 will support LTE CAT6. Mediatek won't have LTE CAT6 chips until the second half of next year.
Qualcomm Snapdragon 805, 808, and 810 also support LTE CAT6
It is worth mentioning here that Qualcomm Snapdragon 805 and Kirin 920 are not the same in chip design, the LTE CAT6 baseband of Snapdragon 805 is an external Gobi MDM9x35, while Kirin 920 is a direct SoC integration, and the chip is integrated, this point Kirin 920 has ultra-high integration. It has certain advantages in power consumption and cost. As a leading international communications company, Huawei's strength can not be underestimated, but also the pride of our people.
The actual use value of LTE CAT6
Upload, download speed is our use of mobile Internet access the most concerned performance, but it should be clear that the LTECAT standard is the 4G transmission speed limit, and can not improve the transmission speed, in the operator's 4G network speed has not reached the next standard, simply raising the limit is meaningless. At present, the 4G networks of domestic operators are all LTE CAT4 standards, and the peak download speed is 150Mbps, but it is difficult to reach the upper limit of LTE CAT4 in practical applications, and even to reach 100Mbps is very difficult, so at this stage LTE CAT6 has no use value.
In terms of real life applications, LTE CAT6 is not as beautiful as we think. We can do a calculation, according to the formula 1MB/s=8Mbps, the maximum download speed of LTE CAT4 is 18.75MB/s, such a download speed, for 1080P video online playback has no pressure, even 4K online film source still can not occupy such a large bandwidth, So LTE CAT6 has no use either.
To sum up, LTE CAT6 does not have much use value at this stage, and the term is only a gimmick of manufacturers, until the operator 4G standard reaches LTE CAT6, I believe that LTE CAT6 equipment has long been popular. So as for whether the phone is LTE CAT4 or LTE CAT6, you don't have to care.

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