Undersaturation detection circuit using IR2127

The current detecting circuit shown in the figure is a so-called undersaturation detecting circuit. It was originally used in IGBTs to detect the voltage of IGBTs that are oversaturated due to overcurrent. That is to say, it can also be used for MOSFETs (MOSFETs are conceptually referred to as "Insulated-Gate Field Effect Transistors" (IGFETs), and the gate insulating layer of IGFETs may be other substances than MOSFETs. The oxide layer used. Some people prefer IGFETs when it comes to field-effect transistor components with polysilicon gates, but most of these IGFETs refer to MOSFETs.). For MOSFETs, the principle is similar because the voltage on the FET will increase significantly when overloaded.